IndiumV3, Main, Repository, bibRecord, 00C724

Piezoelectric effect in elongated (In,Ga)As islands on GaAs(100)

Identifieur interne : 00C724 ( Main/Repository ); précédent : 00C723; suivant : 00C725

Piezoelectric effect in elongated (In,Ga)As islands on GaAs(100)

Auteurs : RBID : Pascal:03-0093773

Descripteurs français

Pascal (Inist)
- 7855C, 7867L, 7765L, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Matériau semiconducteur piézoélectrique, Couche épitaxique semiconductrice, Structure îlot, Photoluminescence, Déplacement raie, Rétrécissement raie, Microscopie force atomique, Diffraction RX, Point quantique semiconducteur.

English descriptors

KwdEn :
- Atomic force microscopy, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Island structure, Line narrowing, Photoluminescence, Piezoelectric semiconductors, Semiconductor epitaxial layers, Semiconductor quantum dots, Spectral line shift, XRD.

Abstract

The piezoelectric (PZ) effect is demonstrated for the elongated three-dimensional (In,Ga)As islands grown on a GaAs (100) substrate. The photoluminescence (PL) spectrum is studied as a function of excitation intensity. With increasing excitation intensity, a blue shift and a linewidth reduction of the PL peak from the (In,Ga)As islands are observed. The observed phenomena are attributed to the screening of the internal strain-induced PZ field in the (In,Ga)As islands.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00DC60

Links to Exploration step

Pascal:03-0093773

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Piezoelectric effect in elongated (In,Ga)As islands on GaAs(100)</title>
<author><name sortKey="Ma, Wenquan" uniqKey="Ma W">Wenquan Ma</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Wang, Xiaoyong" uniqKey="Wang X">Xiaoyong Wang</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Wang, Zhiming" uniqKey="Wang Z">Zhiming Wang</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Hussein, Mohammad L" uniqKey="Hussein M">Mohammad L. Hussein</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Shultz, John" uniqKey="Shultz J">John Shultz</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Xiao, Min" uniqKey="Xiao M">Min Xiao</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Salamo, Gregory J" uniqKey="Salamo G">Gregory J. Salamo</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Department of Physics, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0093773</idno>
<date when="2003-01-15">2003-01-15</date>
<idno type="stanalyst">PASCAL 03-0093773 AIP</idno>
<idno type="RBID">Pascal:03-0093773</idno>
<idno type="wicri:Area/Main/Corpus">00DC60</idno>
<idno type="wicri:Area/Main/Repository">00C724</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1098-0121</idno>
<title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title>
<title level="j" type="main">Physical review. B, Condensed matter and materials physics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Island structure</term>
<term>Line narrowing</term>
<term>Photoluminescence</term>
<term>Piezoelectric semiconductors</term>
<term>Semiconductor epitaxial layers</term>
<term>Semiconductor quantum dots</term>
<term>Spectral line shift</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7855C</term>
<term>7867L</term>
<term>7765L</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Gallium arséniure</term>
<term>Semiconducteur III-V</term>
<term>Matériau semiconducteur piézoélectrique</term>
<term>Couche épitaxique semiconductrice</term>
<term>Structure îlot</term>
<term>Photoluminescence</term>
<term>Déplacement raie</term>
<term>Rétrécissement raie</term>
<term>Microscopie force atomique</term>
<term>Diffraction RX</term>
<term>Point quantique semiconducteur</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The piezoelectric (PZ) effect is demonstrated for the elongated three-dimensional (In,Ga)As islands grown on a GaAs (100) substrate. The photoluminescence (PL) spectrum is studied as a function of excitation intensity. With increasing excitation intensity, a blue shift and a linewidth reduction of the PL peak from the (In,Ga)As islands are observed. The observed phenomena are attributed to the screening of the internal strain-induced PZ field in the (In,Ga)As islands.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0>
</fA01>
<fA02 i1="01"><s0>PRBMDO</s0>
</fA02>
<fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0>
</fA03>
<fA05><s2>67</s2>
</fA05>
<fA06><s2>3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Piezoelectric effect in elongated (In,Ga)As islands on GaAs(100)</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MA (Wenquan)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>WANG (Xiaoyong)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>WANG (Zhiming)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>HUSSEIN (Mohammad L.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SHULTZ (John)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>XIAO (Min)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>SALAMO (Gregory J.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA20><s2>035315-035315-5</s2>
</fA20>
<fA21><s1>2003-01-15</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>144 B</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2003 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>03-0093773</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The piezoelectric (PZ) effect is demonstrated for the elongated three-dimensional (In,Ga)As islands grown on a GaAs (100) substrate. The photoluminescence (PL) spectrum is studied as a function of excitation intensity. With increasing excitation intensity, a blue shift and a linewidth reduction of the PL peak from the (In,Ga)As islands are observed. The observed phenomena are attributed to the screening of the internal strain-induced PZ field in the (In,Ga)As islands.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H55C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H67L</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70G65L</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7855C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>7867L</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>7765L</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Matériau semiconducteur piézoélectrique</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Piezoelectric semiconductors</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Structure îlot</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Island structure</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Déplacement raie</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Spectral line shift</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Rétrécissement raie</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Line narrowing</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Microscopie force atomique</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Atomic force microscopy</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Diffraction RX</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>XRD</s0>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0>
</fC03>
<fN21><s1>048</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0306M001144</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00C724 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00C724 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:03-0093773
   |texte=   Piezoelectric effect in elongated (In,Ga)As islands on GaAs(100)
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Piezoelectric effect in elongated (In,Ga)As islands on GaAs(100)

Piezoelectric effect in elongated (In,Ga)As islands on GaAs(100)

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri